VS-MUR1020CTPbF, VS-MUR1020CT-N3
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Vishay Semiconductors
Revision: 11-Aug-11
5
Document Number: 94076
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Fig. 9 - Reverse Recovery Parameter Test Circuit
Fig. 10 - Reverse Recovery Waveform and Definitions
IRFP250
D.U.T.
L = 70 μH
VR
= 200 V
0.01 Ω
G
D
S
dIF/dt
adjust
Q
(4)
rr
0.5 IRRM
dI(rec)M/dt
(5)
0.75 IRRM
(2)
IRRM
trr
tb
ta
IF
(1)
dIF/dt
0
(3)
(1) dIF/dt - rate of change of current
through zero cro
ssing
(2) IRRM
- peak rever
se recovery current
(3) trr
- rever
se recovery time measured
from zero cro
ssing point of negative
going I
F
to point where a line pa
ssing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4) Qrr
- area under curve defned by t
rr
and I
RRM
Qrr
=
trr
x I
RRM
2
(5) dI(rec)M/dt - peak rate of change of
current during t
b
portion of t
rr
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